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| 通用二阶曲率补偿带隙基准电压源 | |
| 引用本文： | 吴贵能,周玮,李儒章,董少青.通用二阶曲率补偿带隙基准电压源[J].微电子学,2010,40(2). |
| 作者姓名： | 吴贵能 周玮 李儒章 董少青 |
| 作者单位： | 1. 重庆邮电大学,重庆,400065 2. 重庆邮电大学,重庆,400065;模拟集成电路国家级重点实验室,重庆,400060 3. 模拟集成电路国家级重点实验室,重庆,400060;中国电子科技集团公司,第二十四研究所,重庆,400060 4. 华南理工大学,广州,510641 |
| 摘 要： | 详细分析了基本低压带隙基准电压源电路实现二阶温度曲率补偿成立的条件。采用0.35μm标准CMOS工艺库,在-50℃～+120℃温度范围内,通过选择合适的电阻比例及MOSFET的沟道调制效应系数λ,获得了任意输出电压值的二阶曲率补偿基准电压源,且具有较低的温度系数。 |
| 关 键 词： | 模拟集成电路 带隙基准电压源 曲率补偿 CMOS |
A Universal 2nd-Order Curvature Compensated CMOS Bandgap Voltage Reference |
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| WU Guineng,ZHOU Wei,LI Ruzhang,DONG Shaoqing.A Universal 2nd-Order Curvature Compensated CMOS Bandgap Voltage Reference[J].Microelectronics,2010,40(2). | |
| Authors: | WU Guineng ZHOU Wei LI Ruzhang DONG Shaoqing |
| Affiliation: | 1/a>;2;2/a>;3;1.Chongqing University of Posts and Telecommunications/a>;Chongqing 400065/a>;P.R.China/a>;2.National Laboratory of Analog IC's/a>;Chongqing 400060/a>;3.Sichuan Institute of Solid-State Circuits/a>;China Electronics Technology Group Corp./a>;4.South China University of Technology/a>;Guangzhou 510641/a>;P.R.China |
| Abstract: | Specific requirements for 2nd-order temperature curvature compensation were analyzed based on low voltage bandgap reference (BGR) circuit. Results from simulation based on standard CMOS 0.35 μm technology showed that, by choosing proper resistance ratio and channel-length modulation coefficient λ for MOSFET, the proposed universal precise curvature compensated BGR could develop arbitrary value of output voltage reference and achieve low temperature coefficient over a wide temperature range from -50 ℃ to +120 ℃. |
| Keywords: | CMOS Analog IC Bandgap reference (BGR) Curvature compensation CMOS |
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