| Theoretical Analysis and Simulation of BJFET Obstructive Characteristics |
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| 引用本文： | ZENGYun YANMin YANYong-hong FANWei. Theoretical Analysis and Simulation of BJFET Obstructive Characteristics[J]. 半导体光子学与技术, 2005, 11(1): 52-55 |
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| 作者姓名： | ZENGYun YANMin YANYong-hong FANWei |
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| 作者单位： | Microelectronicinstitute,HunanUniversity,Changsha410082,CHN |
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| 摘 要： | A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L. The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices.
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| 关 键 词： | BJFET 计算机模拟 双极晶体管 阻塞特征 |
| 收稿时间： | 2004-04-13 |
Theoretical Analysis and Simulation of BJFET Obstructive Characteristics |
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| ZENG Yun,YAN Min,Yan Yong-hong,FAN Wei. Theoretical Analysis and Simulation of BJFET Obstructive Characteristics[J]. Semiconductor Photonics and Technology, 2005, 11(1): 52-55 |
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| Authors: | ZENG Yun YAN Min Yan Yong-hong FAN Wei |
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| Abstract: | A new bipolar junction field-effect transistor (BJFET) was described. The theoretical analysis and computer simulation of BJFET obstructive characteristic are achieved. The gate bias voltage affects the BJFET obstructive voltage greatly. The BJFET obstructive characteristic is relevant to structure parameters of channel width W and channel length L.The decrease-bias-voltage operation can weaken the device obstructive characteristic. The forward turn in device forward obstructive region can also affect the BJFET obstructive characteristic. BJFET has a good high temperature obstructive characteristic and can be applying to high temperature status as high voltage switch devices. |
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| Keywords: | Bipolar junction FET Obstructive characteristic Computer simulation |
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