Group-V composition control for InGaAsP grown by gas source molecular beam epitaxy |
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| Authors: | B W Liang C W Tu |
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| Affiliation: | (1) Department of Electrical and Computer Engineering, University of California at San Diego, 92093-0407 La Jolla, CA;(2) Present address: Hewlett-Packard Optoelectronics Division, 95131 San Jose, CA |
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| Abstract: | Based on our kinetics models for gas source molecular beam epitaxy of mixed group-V ternary materials, the group-V composition
control in InyGa1−yAs1−xPx epilayers has been studied. The P or As composition in InyGa1−yAs1−xPx (lattice matched to InP or GaAs) can be obtained from a simple equation for substrate temperatures below 500°C. This has
been verified by a series of experimental results. |
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| Keywords: | Composition control InyGa1− yAs1− xPx gas source molecular beam epitaxy (GSMBE) kinetics |
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