Electrical properties of BaSnO3 in substitution of antimony for tin and lanthanum for barium |
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Authors: | Tongkai Huang TetsurŌ Nakamura Mitsuru Itoh Yoshiyuki Inaguma Osamu Ishiyama |
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Affiliation: | (1) Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, 227 Yokohama, Japan |
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Abstract: | Polycrystalline materials of BaSn1–x
Sb
x
O3– and Ba1–y
La
y
SnO3– were prepared. Substitutional solubilities of antimony for tin and lanthanum for barium, respectively, in BaSnO3 were obtained to be x=0.18 for BaSn1–x
Sb
x
O3– and y<0.052 for Ba1-y
La
y
SnO3– . The X-ray photoemission spectroscopy measurements showed the valence of antimony and tin is mixed in our samples of BaSn1–x
Sb
x
O3– . At lower temperature, magnetic susceptibilities of BaSn1–x
Sb
x
O3– and Ba1–y
La
y
SnO3– satisfy the Curie law, indicating the existence of non-interacting localized electrons at the Sn4+ site, and forming a Sn4++e– state in these systems. By substitution of antimony and lanthanum in BaSnO3, the conductive properties are semiconductor-like. To explain this conductive behaviour, three types of mechanism were taken into consideration. |
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Keywords: | |
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