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Electrical properties of BaSnO3 in substitution of antimony for tin and lanthanum for barium
Authors:Tongkai Huang  TetsurŌ Nakamura  Mitsuru Itoh  Yoshiyuki Inaguma  Osamu Ishiyama
Affiliation:(1) Research Laboratory of Engineering Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, 227 Yokohama, Japan
Abstract:Polycrystalline materials of BaSn1–x Sb x O3–delta and Ba1–y La y SnO3–delta were prepared. Substitutional solubilities of antimony for tin and lanthanum for barium, respectively, in BaSnO3 were obtained to be x=0.18 for BaSn1–x Sb x O3–delta and y<0.052 for Ba1-y La y SnO3–delta. The X-ray photoemission spectroscopy measurements showed the valence of antimony and tin is mixed in our samples of BaSn1–x Sb x O3–delta. At lower temperature, magnetic susceptibilities of BaSn1–x Sb x O3–delta and Ba1–y La y SnO3–delta satisfy the Curie law, indicating the existence of non-interacting localized electrons at the Sn4+ site, and forming a Sn4++e state in these systems. By substitution of antimony and lanthanum in BaSnO3, the conductive properties are semiconductor-like. To explain this conductive behaviour, three types of mechanism were taken into consideration.
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