Hf-doped and NH/sub 3/-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift |
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Authors: | Yang CW Fang YK Lin CS Tsair YS Chen SM Wang WD Wang MF Cheng JY Chen CH Yao LG Chen SC Liang MS |
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Affiliation: | Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan; |
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Abstract: | A novel technique to form high-K dielectric of HfSiON by doping base oxide with Hf and nitridation with NH/sub 3/, sequentially, is proposed. The HfSiON gate dielectric demonstrates excellent device performances such as only 10% degradation of saturation drain current and almost 45 times of magnitude reduction in gate leakage compared with conventional SiO/sub 2/ gate at the approximately same equivalent oxide thickness. Additionally, negligible flatband voltage shift is achieved with this technique. Time-dependent dielectric breakdown tests indicate that the lifetime of HfSiON is longer than 10 years at V/sub dd/=2 V. |
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