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Electronic structure of FCC phase in Fe-Mn-Si based shape memory alloys and its stability
作者姓名:万见峰  陈世朴  徐祖耀
作者单位:T.Y.HsuSchool of Materials Science and Engineering,Shanghai Jiaotong University,Shanghai 200030,China
基金项目:This work was supported by the National Natural Science Foundation of China (Grant No. 59671023),the Fund for Ph. D. Program, the Ministry of Education of China (No. 97024835),Emerson Electric Co. USA.
摘    要:The relationship between the electronic structure of FCC phase in Fe-Mn-Si alloy and its stability has been studied by using the discrete variational method based on the first principle. The reason why Mn and Si elements have different influences on the stacking fault energy may be related to the electron concentration ( e/a). Si reduces the hole number of 3d band while Mn is rather complicated . The binding energy has been calculated and the experimental results that martensite start temperature (Ms) varies with Si and Mn are explained. When the external stress is exerted in three directions, the electronic structure, the total density of states, the energy gap at Fermi energy level( EF) and the energy degeneracy will change into other states. When the different external stresses are exerted in one direction, 3d or 4s orbital occupations of the central atom decrease, the partial density of states seems to be thinner and its peak increases at EF, the bond orbit shrinks in the direction of the external st


Electronic structure of FCC phase in Fe?Mn?Si based shape memory alloys and its stability
Wan Jianfeng , Chen Shipu and Xu Zuyao.Electronic structure of FCC phase in Fe-Mn-Si based shape memory alloys and its stability[J].Science in China(Technological Sciences),2001,44(5):486-492.
Authors:Wan Jianfeng  Chen Shipu and Xu Zuyao
Affiliation:School of Materials Science and Engineering, Shanghai Jiaotong University, Shanghai 200030, China
Abstract:The relationship between the electronic structure of FCC phase in Fe-Mn-Si alloy and its stability has been studied by using the discrete variational method based on the first principle. The reason why Mn and Si elements have different influences on the stacking fault energy may be related to the electron concentration ( e/a). Si reduces the hole number of 3d band while Mn is rather complicated . The binding energy has been calculated and the experimental results that martensite start temperature (Ms) varies with Si and Mn are explained. When the external stress is exerted in three directions, the electronic structure, the total density of states, the energy gap at Fermi energy level( EF) and the energy degeneracy will change into other states. When the different external stresses are exerted in one direction, 3d or 4s orbital occupations of the central atom decrease, the partial density of states seems to be thinner and its peak increases at EF, the bond orbit shrinks in the direction of the external stress and another bond orbit comes out vertically. These lead to an a decrease in the structural stability and an increase in Ms temperature under the external stress.
Keywords:Fe-Mn-Si alloy  electronic structure  structural stability  binding energy  
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