| 高纯钽板中晶粒生长的取向相关性研究 |
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| 引用本文： | 柳亚辉,刘施峰,范海洋,刘庆. 高纯钽板中晶粒生长的取向相关性研究[J]. 电子显微学报, 2016, 0(1): 17-21. DOI: 10.3969/j.issn.1000-6281.2016.01.003 |
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| 作者姓名： | 柳亚辉 刘施峰 范海洋 刘庆 |
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| 作者单位： | 重庆大学材料科学与工程学院,重庆,400044 |
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| 基金项目： | 国家科技重大专项资金资助项目(No.2011ZX02705)；重庆市科委自然科学基金计划资助项目(2012jjA50023) |
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| 摘 要： | 钽溅射靶材主要用于集成电路中导线的扩散阻挡层，其溅射性能受微观组织影响较大。本文采用电子背散射衍射( EBSD)技术，结合Extend Cahn-Hagel模型对周向轧制钽板的再结晶行为进行分析。并侧重于钽板再结晶初、中期与取向相关的晶粒生长速率的研究。结果表明，{111}?uvw?(?111?//ND)晶粒具有生长优势，初始阶段生长速率约为同期{001}?uvw?(?100?//ND)晶粒的1?6倍。
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| 关 键 词： | 形核机制 电子背散射衍射( EBSD)技术 Extend Cahn-Hagel模型 生长速率 |
Study on the orientation-dependent grain growth of high purity tantalum |
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| Abstract: | Tantalum is commonly used for sputtering target and the sputtering performance is highly dependent on its annealed structure. In this paper, the orientation-dependent grain growths at the early and metaphase recrystallization stages were revealed via the electron backscatter diffraction combined with Extend Cahn-Hagel model. The results show that the growth rate for {111}?uvw?(?111?//ND) grains is about 1?6 times faster than that for {001}?uvw?(?100?//ND) grains. |
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| Keywords: | nucleation mechanism electron backscatter diffraction Extend Cahn-Hagel model growth rate |
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