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背照式CCD图像传感器减薄技术研究
引用本文:邓刚,韩恒利,钟四成.背照式CCD图像传感器减薄技术研究[J].电子科技,2014,27(2):68-70.
作者姓名:邓刚  韩恒利  钟四成
作者单位:(重庆光电技术研究所 硅工艺中心,重庆 400060)
摘    要:提出了一种研磨减薄和化学腐蚀结合的方法,减薄CCD衬底。研磨减薄采用三氧化二铝的颗粒,减薄硅片至100 μm,化学腐蚀采用HF酸、硝酸、冰乙酸组成的混合溶液。实验表明,HF酸、硝酸、冰乙酸比例为2:1:11时,混合溶液对衬底与外延层的腐蚀速率比达到89:1。使用本技术减薄1 024×512可见光CCD,实现了背照式成像。

关 键 词:背照  CCD  减薄  成像  

Backside-illuminated Charge-coupled Devices (CCDS) Thinning Technology
DENG Gang,HAN Hengli,ZHONG Sicheng.Backside-illuminated Charge-coupled Devices (CCDS) Thinning Technology[J].Electronic Science and Technology,2014,27(2):68-70.
Authors:DENG Gang  HAN Hengli  ZHONG Sicheng
Affiliation:(Silicon Technology Center,Chongqing Optoelectronics Research Institute,Chongqing 400060,China)
Abstract:Backside-illuminated charge-coupled devices (CCDs) need backside thinning. A novel chemical af- ter mechanical thinning technique is proposed. Aluminium oxide abrasive is used for grinding thinning to reduce the thickness to 100μm, and solution mixed by HF acid, nitric acid and ice acetic acid for chemical corrosion. Experi- ments show that a ratio of 2: 1:11 of HF acid, nitric acid and ice acetic acid achieves a substrate to epitaxial layer corrosion rate of 89: 1. This technique is used to thin the 1 024 × 512 visible light CCD, which realizes backside-il- luminated imaging.
Keywords:backside-illuminated  charge-couple device  thinning
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