| GaAsSOI衬底上PHEMT器件特性演示 |
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| 引用本文： | 贾海强,陈弘,王文冲,王文新,李卫,黄绮,周均铭. GaAsSOI衬底上PHEMT器件特性演示[J]. 固体电子学研究与进展, 2002, 22(2): 238-240 |
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| 作者姓名： | 贾海强 陈弘 王文冲 王文新 李卫 黄绮 周均铭 |
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| 作者单位： | 中国科学院物理研究所凝聚态物理中心,北京,100080 |
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| 摘 要： | 利用分子束外延生长了 Ga As/Al As/Ga As夹层结构材料 ,通过侧向湿法热氧化技术 ,成功制作了Ga As SOI衬底 ,并在其上生长了 PHEMT材料结构。X射线双晶摇摆曲线分析证明材料结构完整 ,晶体质量良好。器件结果显示了优良的 I-V特性 ,零偏压下漏源电流为 3 2 0 m A/mm,最大跨导为 2 5 0 m S/mm,器件具有良好的夹断性能 ,极好的电荷控制能力和高线性特性
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| 关 键 词： | 分子束外延 氧化 赝配高电子迁移率晶体管 |
| 文章编号： | 1000-3819(2002)02-238-03 |
| 修稿时间： | 2001-09-15 |
DC Characteristic Demonstration of PHEMT Grown on GaAs SOI Substrate |
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| JIA Haiqiang CHEN Hong WANG Wenchong WANG Wenxin LI Wei HUANG Qi ZHOU Junming. DC Characteristic Demonstration of PHEMT Grown on GaAs SOI Substrate[J]. Research & Progress of Solid State Electronics, 2002, 22(2): 238-240 |
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| Authors: | JIA Haiqiang CHEN Hong WANG Wenchong WANG Wenxin LI Wei HUANG Qi ZHOU Junming |
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| Abstract: | GaAs SOI substrate was successfully fabricated by the lateral wet oxidation of AlAs sandwiched between GaAs, using molecular beam epitaxy (MBE). Double crystal X ray rocking curve showed good crystal quality of pseudomorphic high electron mobility transistor (PHEMT) structure grown on it. The result of the devices with 1.2 μm gate length exhibited a drain current density of 320 mA/mm at V gs =0 V. The maximum transconductance of the device was 250 mS/mm. I V curve of the device showed excellent charge control and eliminated substrate leakage current. |
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| Keywords: | MBE oxidation PHEMT |
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