In
x
Ga 1–x
As Strained-Layer Quantum Well in a Pseudomorphic Heterostructure: High-Resolution XRD Characterization for Different Quantum-Well Thicknesses |
| |
| Authors: | A M Afanas'ev R M Imamov A A Lomov V G Mokerov M A Chuev Yu V Fedorov Yu V Khabarov |
| |
| Affiliation: | (1) Institute of Physics and Technology, Russian Academy of Sciences, Moscow, Russia;(2) Shubnikov Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia;(3) Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow, Russia |
| |
| Abstract: | Strained-layer quantum wells of different thicknesses are realized in the form of an n-Al0.25Ga0.75As/In
x
Ga1 – x
As/GaAs pseudomorphic heterostructure. The structural properties of the quantum wells are determined by high-resolution double-crystal XRD and by photoluminescence spectroscopy. The depth profile of In mole fraction is derived from the rocking curves. It indicates that the quantum-well interfaces are strongly smeared and hence their In mole fractions are less than the target value, 0.19. The XRD data are compared with the photoluminescence ones. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
