Growth of (GaAs)1_x(Ge2)x by metalorganic chemical vapor deposition |
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Authors: | S M Vernon M M Sanfacon R K Ahrenkiel |
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Affiliation: | (1) Spire Corporation, 01730 Bedford, MA;(2) NREL, 80401 Golden, CO |
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Abstract: | We report deposition of (GaAs)1_x(Ge2)x on GaAs substrates over the entire alloy range. Growth was performed by metalorganic chemical vapor deposition at temperatures
of 675 to 750°C, at 50 and 760 Torr, using trimethylgallium, arsine, and germane at rates of 2–10 μ/h. Extrinsic doping was
achieved using silane and dimethylzinc in hydrogen. Characterization methods include double-crystal x-ray rocking curve analysis,
Auger electron spectroscopy, 5K photoluminescence, optical transmission spectra, Hall-effect, and Polaron profiling. Results
achieved include an x-ray rocking curve full-width at half maximum as narrow as 12 arc-s, Auger compositions spanning the
alloy range from x = 0.03 to x = 0.94, specular surface morphologies, and 5K photoluminescence to wavelengths as long as 1620
nm. Undoped films are n type, with n ≈ 1 × 1017 cm−3. Extrinsic doping with silane and dimethylzinc have resulted in films which are n type (1017 to 1018 cnr−3) or p type (5 × 1018 to 1 × 1020 cm−3). Mobilities are generally ≈ 50 cm2/V-s and 500 cm2/V-s, for p and n films, respectively. |
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Keywords: | III-V-IV2 compound gallium arsenide-germanium alloy metalorganic chemical vapor deposition |
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