Electrical Properties of Lead Zirconate Titanate Thin Films With a ZrO2 Buffer Layer on an Electroless Ni-Coated Cu Foil |
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| Authors: | Taeyun Kim Angus I Kingon Jon-paul Maria Robert T Croswell |
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| Affiliation: | Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; Physical Realization Research Center of Excellence, Motorola Labs, Schaumburg, Illinois 60196 |
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| Abstract: | The effect of zirconia (ZrO2) buffer layers on the phase development and electrical properties of lead zirconate titanate (PZT, 52/48) capacitors on an electroless Ni (P)-coated Cu foil was investigated. It was demonstrated that the buffer layer can be used to engineer the final properties. The incorporation of the ZrO2 buffer layers retained acceptable capacitance densities (>350 nF/cm2 for 50 nm thick ZrO2), while significantly reducing leakage currents and improving reliability (<10?7 A/cm2 after 1 h at 25 VDC for 100 nm thick ZrO2), compared with PZT thin films directly on electroless Ni (P). The results are particularly important for embedded capacitor applications. |
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