| InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触 |
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| 引用本文： | 张静,吕红亮,倪海桥,牛智川,张义门,张玉明. InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触[J]. 红外与毫米波学报, 2018, 37(6): 679-682 |
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| 作者姓名： | 张静 吕红亮 倪海桥 牛智川 张义门 张玉明 |
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| 作者单位： | 西安电子科技大学 宽带隙半导体技术国家重点学科实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室,中国科学院半导体研究所，超晶格国家重点实验室,中国科学院半导体研究所，超晶格国家重点实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室,西安电子科技大学 宽带隙半导体技术国家重点学科实验室 |
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| 摘 要： | 为了得到较低的接触电阻, 研究了帽层未掺杂的InAs/AlSb异质结的Pd/Ti/Pt/Au合金化欧姆接触.利用传输线模型 (TLM) 测量了接触电阻Rc.在最佳的快速热退火条件为275℃和20s时, InAs/AlSb异质结的Pd/Ti/Pt/Au接触电阻值为0.128Ω·mm.TEM观察发现经过快速热退火后Pd已经扩散到半导体中有利于高质量欧姆接触的形成.研究表明经过Pd/Ti/Pt/Au合金化欧姆接触后Rc有明显减小, 适用于InAs/AlSb异质结的应用.
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| 关 键 词： | 欧姆接触 快速热退火 InAs/AlSb异质结 |
| 收稿时间： | 2018-01-19 |
| 修稿时间： | 2018-05-19 |
Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer |
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| ZHANG Jing,LYU Hong-Liang,NI Hai-Qiao,NIU Zhi-Chuan,ZHANG Yi-Men and ZHANG Yu-Ming. Pd/Ti/Pt/Au alloyed ohmic contact for InAs/AlSb heterostructures with the undoped InAs cap layer[J]. Journal of Infrared and Millimeter Waves, 2018, 37(6): 679-682 |
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| Authors: | ZHANG Jing LYU Hong-Liang NI Hai-Qiao NIU Zhi-Chuan ZHANG Yi-Men ZHANG Yu-Ming |
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| Affiliation: | School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,School of Microelectronics, Xidian University and Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices |
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| Abstract: | |
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| Keywords: | Ohmic contacts rapid thermal annealing InAs/AlSb heterostructures |
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