| InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用 |
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| 引用本文： | 刘军,于伟华,杨宋源,侯彦飞,崔大胜,吕昕.InAlAs/InGaAs/InP基PHEMTs小信号建模及低噪声应用[J].红外与毫米波学报,2018,37(6):683-687. |
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| 作者姓名： | 刘军 于伟华 杨宋源 侯彦飞 崔大胜 吕昕 |
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| 作者单位： | 北京理工大学 毫米波与太赫兹技术北京市重点实验室,北京理工大学,北京理工大学,北京理工大学,北京理工大学,北京理工大学 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | 利用改进的小信号模型对采用100nmInAlAs/InGaAs/InP工艺设计实现的PHEMTs器件进行建模, 并设计实现了一款W波段单片低噪声放大器进行信号模型的验证。为了进一步改善信号模型低频S参数拟合差的精度, 该小信号模型考虑了栅源和栅漏二极管微分电阻, 在等效电路拓扑中分别用Rfs和Rfd表示.为了验证模型的可行性, 基于该信号模型研制了W波段低噪声放大器单片.在片测试结果表明:最大小信号增益为14.4dB@92.5GHz, 3dB带宽为25GHz@85-110GHz.而且, 该放大器也表现出了良好的噪声特性, 在88GHz处噪声系数为4.1dB, 相关增益为13.8dB.与同频段其他芯片相比, 该放大器单片具有宽3dB带宽和高的单级增益.
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| 关 键 词： | InAlAs/InGaAs/InP，赝高电子迁移率晶体管（PHEMTs） 小信号模型，毫米波和亚毫米波，单片微波集成电路（MMIC），低噪声放大器 |
| 收稿时间： | 2018/1/30 0:00:00 |
| 修稿时间： | 2018/3/8 0:00:00 |
Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs |
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| LIU Jun,YU Wei-Hu,YANG Song-Yuan,HOU Yan-Fei,CUI Da-Sheng and LYU Xin.Small signal model and low noise application of InAlAs/InGaAs/InP-based PHEMTs[J].Journal of Infrared and Millimeter Waves,2018,37(6):683-687. |
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| Authors: | LIU Jun YU Wei-Hu YANG Song-Yuan HOU Yan-Fei CUI Da-Sheng and LYU Xin |
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| Affiliation: | Beijing Key Laboratory of Millimeter Wave and Terahertz Technology, Beijing Institute of Technology,Beijing Institute of Technology,Beijing Institute of Technology,Beijing Institute of Technology,Beijing Institute of Technology,Beijing Institute of Technology |
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| Abstract: | This paper presents an improved small-signal model and a W-band monolithic low noise amplifier (LNA) using 100 nm InAlAs/InGaAs/InP-based high electron mobility transistors (HEMT) technology.For improving the fitting accuracy of S-parameters in low frequency, the small-signal model takes into account differential resistances of gate-to-source and gate-to-drain diodes, which modeled by resistances Rfsand Rfd.A W-band LNA monolithic millimeter-wave integrated circuit (MMIC) has been designed and fabricated based on this model to verify the feasibility of this model.The amplifier is measured on-wafer with a small-signal peak gain of 14.4 d B at 92.5 GHz and 3-dB bandwidth from 85 to 110 GHz.In addition, the MMIC also exhibits an excellent noise characteristic with the noise figure of 4.1 dB and the associate gain of 13.8 d B at 88 GHz.This MMIC amplifier shows wider 3-dB bandwidth and higher per-stage gain than others results at the similar band. |
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| Keywords: | InAlAs/InGaAs/InP PHEMTs small-signal model millimeter and submillimeter MMIC LNA |
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