| SiO2钝化膜对非极性AlGaN-MSM紫外探测器的影响 |
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| 引用本文： | 贾辉,徐建飞,石璐珊.SiO2钝化膜对非极性AlGaN-MSM紫外探测器的影响[J].光电子．激光,2018,29(7):698-702. |
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| 作者姓名： | 贾辉 徐建飞 石璐珊 |
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| 作者单位： | 公安海警学院 基础部,宁波 315801,公安海警学院 基础部,宁波 315801,宁波科技信息研究院 研究中心,宁波 315040 |
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| 基金项目： | 浙江省教育厅科研项目(Y201737504)资助项目 (1.公安海警学院 基础部,宁波 315801； 2.宁波科技信息研究院研究中心,宁波 315040) |
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| 摘 要： | 采用SiO2钝化膜方法对引入低温AlN插入层的高 温MOCVD外延生长的未掺杂的非极性AlGaN外 延薄膜制备了金属-半导体-金属(MSM)结构的紫外光电探测器。研究了磁控溅射SiO2钝 化膜对探测器光电性能的提 升。暗电流测试表明,钝化处理使探测器的暗电流可以降低了2-3个数量级。在5V偏压下 , 通过光谱响应测试发现,经过钝化处理的探测器在300 nm处具有陡峭 的截止边,具有很好 的深紫外特性,光谱响应范围提高了3个数量级,抑制比高达105。
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| 关 键 词： | SiO2钝化膜 非极性 AlGaN 紫外探测器 |
| 收稿时间： | 2017/12/7 0:00:00 |
Effect of SiO2passivation layer on performances of nonpolar AlGaN-MSM ultraviolet photodetetor |
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| JIA Hui,XU Jian-fei and SHI Lu-shan.Effect of SiO2passivation layer on performances of nonpolar AlGaN-MSM ultraviolet photodetetor[J].Journal of Optoelectronics·laser,2018,29(7):698-702. |
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| Authors: | JIA Hui XU Jian-fei and SHI Lu-shan |
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| Affiliation: | Basic Courses Department,China Maritime Police Academy,Ningbo 315801,Chin a,Basic Courses Department,China Maritime Police Academy,Ningbo 315801,Chin a and Basic Courses Department,China Maritime Police Academy,Ningbo 315801,Chin a |
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| Abstract: | The metal-semiconductor-metal (MSM) structure ultraviolet (UV) photodetector p assivated by SiO2passivation layer (with SiO2SPL) was fabricated on the nonpolar AlGaN grown by metalorganic chemical vapor deposition (MOCVD).The results indicate that th e surface passivation of SiO2SPL is an important way to enhance the UV performance of t he nonpolar AlGaN-MSM UV photodetector.The fabricated devices are characterized by measurin g the dark current characteristic and the spectral response.It is found that the dark current of the UV photodetector is decreased by 2-3orders of magnitude after being passivated by SiO2SPL.When the reverse voltage is 5V,the UV photodetector exhibits a sh arp cut-off wavelength at about 300nm,the spectral response is increased by 103times,and the rejection ratio of photode tector as high as 105. |
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| Keywords: | SiO2passivation layer nonpolar AlGaN UV photodetector |
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