STM probe-assisted site-control of self-organized InAs quantum dots on GaAs surfaces |
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Authors: | Shigeru Kohmoto Hitoshi Nakamura Tomonori Ishikawa Kiyoshi Asakawa |
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Affiliation: | (1) The Femtosecond Technology Research Association (FESTA), 5-5 Tokodai, 300-2635 Tsukuba, Japan |
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Abstract: | A site-control technique for individual InAs quantum dots (QDs) has been developed by using scanning tunneling microscope (STM) probe-assisted nanolithography and self-organizing molecular-beam epitaxy. We find that nano-scale deposits can be created on a GaAs surface by applying voltage and current pulses between the surface and a tungsten tip of the STM, and that they act as “nano-masks” on which GaAs does not grow directly. Accordingly, subsequent thin GaAs growth produces GaAs nano-holes above the deposits. When InAs is supplied on this surface, QDs are self-organized at the hole sites, while hardly any undesirable Stranski-Krastanov QDs are formed in the flat surface region. Using this technique with nanometer precision, a QD pair with 45-nm pitch is successfully fabricated. An erratum to this article is available at . |
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Keywords: | Site-control quantum dot scanning tunneling microscope self-organization InAs |
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