Photoluminescence line width of self-assembled Ge(Si) islands arranged between strained Si layers |
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Authors: | M V Shaleev A V Novikov N A Baydakova A N Yablonskiy O A Kuznetsov D N Lobanov Z F Krasilnik |
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Affiliation: | 1.Institute for Physics of Microstructures,Russian Academy of Sciences,Nizhny Novgorod,Russia;2.Nizhny Novgorod State University,Nizhny Novgorod,Russia;3.Physico-Technical Research Institute,Nizhny Novgorod State University,Nizhny Novgorod,Russia |
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Abstract: | The effect of variations in the strained Si layer thicknesses, measurement temperature, and optical excitation power on the
width of the photoluminescence line produced by self-assembled Ge(Si) nanoislands, which are grown on relaxed SiGe/Si(001)
buffer layers and arranged between strained Si layers, is studied. It is shown that the width of the photoluminescence line
related to the Ge(Si) islands can be decreased or increased by varying the thickness of strained Si layers lying above and
under the islands. A decrease in the width of the photoluminescence line of the Ge(Si) islands to widths comparable with the
width of the photoluminescence line of quantum dot (QD) structures based on direct-gap InAs/GaAs semiconductors is attained
with consideration of diffusive smearing of the strained Si layer lying above the islands. |
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