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PECVD of h-BN and c-BN films from boranedimethylamine as a single source precursor |
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| Authors: | Giovanni A. Battiston Davide Berto Dario Emiliani Rosalba Gerbasi |
| Affiliation: | a Istituto di Chimica Inorganica e delle Superfici del C.N.R., Corso Stati Uniti 4, 35127 Padova, Italy b Istituto per lo Studio dei Materiali Nanostrutturati del C.N.R., Via Salaria Km. 29.3, 00016 Monterotondo, St. Roma, Italy c ICMAB/CSIC, Campus UAB, 08193 Bellaterra, Spain. Centro de Fisica Aplicada y Tecnologia Avanzada-UNAM A.P. 1-1010, Santiago de Querétaro, QRO, CP 76000, Mexico |
| Abstract: | Boron nitride (BN) thin films have been successfully synthesised via low pressure plasma enhanced chemical vapour deposition (PECVD) by using boranedimethylamine, BH3NH(CH3)2, as a single source precursor in the temperature range 280-550 °C in a nitrogen-argon atmosphere. The plasma power was optimised with the aim of obtaining suitable cubic/hexagonal phase ratios. The annealing of the h-BN films at temperatures up to 1000 °C in a nitrogen atmosphere, at normal pressure, gave rise to a complete transformation into the cubic phase. FTIR measurements provided a suitable method for identifying the structure of BN films. UV-vis spectroscopy was carried out in order to investigate the optical behaviour of the films. |
| Keywords: | PECVD h-BN c-BN Boranedimethylamine Single source |
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