Effects of support method and mechanical property of 300 mm silicon wafer on sori measurement |
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Authors: | Wataru Natsu Yukihiro Ito Masanori Kunieda Kaoru Naoi Nobuaki Iguchi |
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Affiliation: | aDepartment of Mechanical Systems Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Nakacho, Koganei, Tokyo 184-8588, Japan;bMetrology Systems Division, Kuroda Precision Industries Ltd., 239 Simohirama, Saiwai-ku, Kawasaki 212-5560, Japan |
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Abstract: | This paper describes the effects of support methods and mechanical properties of 300 mm silicon wafer on sori measurement. A new supporting method, named three-point-support method, used in the sori measurement of a large diameter silicon wafer was proposed in this study to obtain a more stable measuring process. The wafer was supported horizontally by three steel balls on the vertexes of a regular triangle at the wafer edge. The measuring repeatability and anti-disturbance ability were compared between the proposed method and the conventional one-point-support method, in which the wafer is supported with a small-area chuck at the wafer center. The effects of friction between the supports and wafer surface for the three-point-support were also estimated. Finally, the influences of different mechanical characteristics at the front and back surfaces and the crystal orientation on sori measurement were investigated. |
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Keywords: | Silicon wafer Sori measurement Support method Mechanical property Crystal orientation |
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