| SiC中基态施主能级分裂对杂质电离的影响 |
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| 引用本文： | 戴振清,杨克武,杨瑞霞.SiC中基态施主能级分裂对杂质电离的影响[J].半导体技术,2009,34(3). |
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| 作者姓名： | 戴振清 杨克武 杨瑞霞 |
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| 作者单位： | 河北科技师范学院,河北秦皇岛,066600;中国电子科技集团公司第十三研究所,石家庄,050051;河北工业大学,天津,300130 |
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| 摘 要： | 对SiC中基态施主能级分裂对杂质电离的影响,与温度、掺杂浓度和杂质能级深度的关系进行了系统研究.发现只有在高温且掺杂浓度低的情况下,能级分裂的影响很小可忽略不计,其他条件下均需考虑能级分裂因素.随掺杂浓度的增加,能级分裂的影响增强;随温度的升高,能级分裂影响的整体趋势下降,但存在峰值.当杂质能级深度发生变化时,能级分裂的影响显得比较复杂;曲线上的峰值随着能级深度的增加而向高温方向移动,能级越浅峰就越小;并且在高于某一温度时,随能级的加深能级分裂的影响逐渐增强.
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| 关 键 词： | 碳化硅 基态施主能级分裂 杂质电离 掺杂浓度 |
Effect of the Valley-Orbit Splitting in SiC on the Dopant Ionization |
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| Dai Zhenqing,Yang Kewu,Yang Ruixia.Effect of the Valley-Orbit Splitting in SiC on the Dopant Ionization[J].Semiconductor Technology,2009,34(3). |
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| Authors: | Dai Zhenqing Yang Kewu Yang Ruixia |
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| Affiliation: | 1.Hebei Normal University of Science & Technology;Qinhuangdao 066600;China;2.The 13th Research Institute;CETC;Shijiazhuang 050051;3.Hebei University of Technology;Tianjin 300130;China |
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| Abstract: | In SiC,the relations between the influence of valley-orbit splitting on ionization of dopant and doping concentration,temperature and the depth of dopant energy level were investigated systematically through theoretical computation.The influence of valley-orbit splitting is too small to be considered in low doping concentration and high temperature,and in other cases it has to be considered.The influence heightens with doping concentration increased.And it declines in the whole with temperature enhancing,bu... |
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| Keywords: | silicon carbide valley-orbit splitting ionization of dopant doping concentration |
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