Device reliability under electrical stress and photo response of oxide TFTs |
| |
Authors: | Sang‐Hee Ko Park Min‐Ki Ryu Sung‐Min Yoon Shinhyuk Yang Chi‐Sun Hwang Jae‐Hong Jeon |
| |
Affiliation: | 1. ETRI, Oxide Electronics Research Team, 138 Gajeongro, Yuseong‐gu, Daejeon, 305‐350, Korea;2. School of Electronics Telecommunications and Computer Engineering, Korea Aerospace University, Korea |
| |
Abstract: | Abstract— The stability of oxide TFTs has been the main focus of this research and is probably the most crucial requirement for the successful application to flat‐panel displays. Although the high Fermi level of oxide semiconductors makes TFTs basically stable under electrical stress, the device reliability under diverse variations of electrical stress is affected by materials such as active semiconductors and gate insulators, processes for the formation of back/front channels and passivation layers, and device configurations among other things. How these factors affect the device reliability have been investigated and a review of the stability is presented. In addition, several categories of the light instability of oxide TFTs is presented and the origin is discussed. |
| |
Keywords: | Oxide TFT bias stability passivation photo response negative‐bias enhanced photo instability |
|
|