Effects of Xe content on wall‐voltage variation during address period in AC plasma‐display panel |
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| Authors: | Soo‐Kwan Jang Choon‐Sang Park Heung‐Sik Tae Bhum Jae Shin Jeong Hyun Seo Eun‐Young Jung |
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| Affiliation: | 1. School of Electrical Engineering and Computer Science, Kyungpook National University, E10‐911, 1370 Sankyuk‐dong, Buk‐gu, Daegu, NA 702‐701, Korea.;2. Department of Electronics Engineering, Sejong University, Seoul, Korea.;3. Department of Electronics Engineering, University of Incheon, Incheon, Korea.;4. Core Technology Lab., Corporate R&D Center, Samsung SDI Co., Ltd., Gyonggi‐do, Korea. |
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| Abstract: | Abstract— To investigate the influence of the gas condition, especially xenon (Xe) gas, on the wall‐voltage variation in relation to the electric‐field intensity during the address period, the wall voltages were measured under various Xe‐gas content ranging from 11 to 20% by using the Vt closed curve analysis method. It was observed that under a weak electric‐field intensity between the scan and address electrodes, the change in Xe content did not affect the wall‐voltage variation, even at a higher panel temperature of 65δC. However, under a strong electric‐field intensity, the wall‐voltage variations were reduced with an increase in the Xe content, confirming that a higher electric‐field intensity would be required to induce the wall‐voltage variation at a higher Xe content during the address period. |
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| Keywords: | Wall‐voltage variation Xe‐gas content priming condition electric‐field intensity panel temperature |
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