MOS器件的质子总剂量效应

介绍了几种加固和非加固 MOS电路的质子辐照总剂量效应实验 ,质子束的能量为 9、 7、 5、 2 Me V.实验结果表明 ,在相同的吸收剂量下 ,MOS器件累积电离辐射损伤与质子能量成正比 .还给出了栅极偏压对器件质子辐射损伤的影响 ,结果认为 ,对于 NMOSFET,不论是加固器件 ,还是非加固器件 ,在 +5 V的栅压偏置下 ,器件的辐射损伤比 0 V栅压下的损伤严重 ,对于加固器件 ,辐射感生界面态的密度也较高 ;而加固型 PMOSFET,在 0 V的栅压下 ,辐射损伤比 - 5 V下严重 ,且界面态的密度高

Total DoseEffects of Protons on MOS Devices

The total dose effects of protons on the soft oxide MOS devices and rad hard MOS devices are tested.Irradiated with 2,5,7 and 9MeV protons,the damage has been measured,respectively.It is indicated that the radiation damage of MOS devices,whether soft or rad hard,varies with the energy of protons,i.e.,higher energy protons will cause more damage.The radiation effects are different to MOS devices under the bias condition and under the zero gate bias condition.For hard oxide N channel transistor,the damage is more serious and the density of the interface traps bias condition is higher than that under zero bias condition,while for hard oxide P channel,the density under zero gate bias condition is higher than that under bias condilion.