A W-band monolithic downconverter |
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| Authors: | Chang K.W. Wang H. Bui S.B. Chen T.-h. Tan K.L. Ton T.-N. Berenz J. Dow G.S. Lin T.S. Garske D.C. Liu L.C.T. |
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| Affiliation: | TRW/ESG, Div. of Electron. & Technol., Redondo Beach, CA; |
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| Abstract: | The design, fabrication, and evaluation of a fully integrated W-band monolithic downconverter based on InGaAs pseudomorphic HEMT technology are presented. The monolithic downconverter consists of a two-stage low-noise amplifier and a single-balanced mixer. The single-balanced mixer has been designed using the HEMT gate Schottky diodes inherent to the process. Measured results of the complete downconverter show conversion gain of 5.5 dB and a double-sideband noise figure of 6.7 dB at 94 GHz. Also presented is the downconverter performance characterized over the -35°C to +65°C temperature range. The downconverter design was a first pass success and has a high circuit yield |
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