Spectroscopic Investigation of Quantum Confinement Effects in Ion Implanted Silicon-on-Sapphire Films |
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| Authors: | Rajesh Kumar H S Mavi A K Shukla |
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| Affiliation: | 1.Department of Physics,Indian Institute of Technology,New Delhi,India;2.National Institute for Nanotechnology,University of Alberta,Edmonton,Canada |
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| Abstract: | Crystalline Silicon-on-Sapphire (SOS) films were implanted with boron (B+) and phosphorous (P+) ions. Different samples, prepared by varying the ion dose in the range 1014–5 × 1015 and ion energy in the range 150–350 keV, were investigated by the Raman spectroscopy, photoluminescence (PL) spectroscopy
and glancing angle x-ray diffraction (GAXRD). The Raman results from dose dependent B+ implanted samples show red-shifted and asymmetrically broadened Raman line-shape for B+ dose greater than 1014 ions cm−2. The asymmetry and red shift in the Raman line-shape is explained in terms of quantum confinement of phonons in silicon nanostructures
formed as a result of ion implantation. PL spectra shows size dependent visible luminescence at ∼1.9 eV at room temperature,
which confirms the presence of silicon nanostructures. Raman studies on P+ implanted samples were also carried out as a function of ion energy. The Raman results show an amorphous top SOS surface
for sample implanted with 150 keV P+ ions of dose 5 × 1015 ions cm−2. The nanostructures are formed when the P+ energy is increased to 350 keV by keeping the ion dose fixed. The GAXRD results show consistency with the Raman results. |
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