Characteristics of surface states at the insulator-semiconductor interface of ZnS:Mn thin-film electroluminescent emitters

The energy distribution of the density of occupied surface states (N _ss) at the cathode insulatorphosphor interface in ZnS:Mn electroluminescent thin-film (ELTF) emitters has been modeled on the basis of experimental data. Changes in this distribution depending on the parameters of exciting voltage pulses have been studied. It is established that the energy distribution of N _ss shifts toward deeper levels upon a decrease in the frequency of the exciting signal and the resulting increase in the pause between the adjacent switch-on states. This behavior corresponds to a cascade relaxation mechanism of electrons trapped on the surface states. Maximum values of the N _ss (∼2.5 × 10¹³ cm⁻²) and the specific density of surface states per unit energy (2 × 10¹⁴–10¹⁵ cm⁻² eV⁻¹) are determined for the cathode insulator-phosphor interface from which electrons are tunneling. Positions of the equilibrium (∼1.25 eV below the conduction-band bottom) and the quasi-equilibrium (0.6–1.25 eV) Fermi levels during the ELTF emitter operation are estimated.