Ion-implanted In0.53Ga0.47As/In0.52Al0.48As lateral PNP transistors

Lateral PNP transistors have been realized for the first time in the (In,Ga)As/(In,Al)As heterostructure material system. Be ion implantation has been used to form the emitter and collector junctions. A current gain of 3.8 is obtained up to 200 µA of collector current for devices with a 1.5 µm electrical base width. A hole diffusion length of 2 µm in the (In,Ga)As is estimated.