Dynamic properties of 1.3 μm semi-insulating-BHlight-emission-and-detection (LEAD)-diode module for subscriber TCMtransmission systems |
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| Authors: | Kurosaki T. Tohmori Y. Fukuda M. Nakamura M. Kimura H. Matsumoto S. Sugie T. |
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| Affiliation: | NTT Opto-Electron. Labs., Kanagawa; |
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| Abstract: | The dynamic properties of a 1.3 μm light-emission-and-detection (LEAD)-diode module that has a high mesa semi-insulating buried heterostructure (SI-BH) to reduce the capacitance of the chip (0.6-0.8 pF) are described. A modulation bandwidth of 12 GHz in laser diode (LD) operation, and detection bandwidth of ~1.9 GHz in photodetector (PD) operation are achieved using a chip and a module, respectively. In bit error rate (BER) performance at 30 Mbit/s, a receiver sensitivity (BER=10-8) of -37.4 dBm is confirmed, and a switching time of under 1 μs from LD to PD operation is estimated using a circuit simulator |
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