| 基于CMOS的RF IC的发展现状 |
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| 引用本文： | 黄广宇,胡勇,杨旭,陈守顺,朱亚江. 基于CMOS的RF IC的发展现状[J]. 微电子学, 2002, 32(4): 283-286 |
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| 作者姓名： | 黄广宇 胡勇 杨旭 陈守顺 朱亚江 |
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| 作者单位： | 中国科学院,微电子中心,北京,100029 |
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| 摘 要： | 目前，射频电路存在广阔的市场，成为无线通信领域内研究的热点之一。文章主要介绍了基于CMOS工艺的射频电路的研完现状。
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| 关 键 词： | 射频集成电路 低噪声放大器 功率放大器 压控振荡器 开关 |
| 文章编号： | 1004-3365(2002)04-0283-04 |
| 修稿时间： | 2001-07-10 |
The Present Status of the Development of RF Devices in CMOS |
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| HUANG Guang yu,HU Yong,YANG Xu,CHEN Shou shun,ZHU Ya jiang. The Present Status of the Development of RF Devices in CMOS[J]. Microelectronics, 2002, 32(4): 283-286 |
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| Authors: | HUANG Guang yu HU Yong YANG Xu CHEN Shou shun ZHU Ya jiang |
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| Abstract: | Radio frequency transceiver circuits have a very broad range of applications As a result, RF circuits have become one of the most active research areas in wireless communications The present status of the development of RF IC's in CMOS process is presented in the paper |
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| Keywords: | Radio frequency IC Low noise amplifier Power amplifier Voltage controlled oscillator Switch |
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