| LPCVD多晶硅薄膜发雾的形成与消除 |
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| 引用本文： | 许帅,徐超,王新胜,刘国柱.LPCVD多晶硅薄膜发雾的形成与消除[J].电子与封装,2012,12(2):40-43. |
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| 作者姓名： | 许帅 徐超 王新胜 刘国柱 |
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| 作者单位： | 中国电子科技集团公司第58研究所,江苏无锡,214035 |
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| 摘 要： | LPCVD多晶硅薄膜发雾对CMOS器件性能有重大影响,文章分析了多晶硅薄膜发雾的形成机理与影响因素,指出了低温、低压以及保持气路系统的清洁是消除多晶"发雾"的有效措施。根据多晶硅薄膜雾状斑点的形状与分布位置,对硅片表面缺陷的来源进行了分类,并从清洗工艺、污染物成分分析、前道工序等方面提出了相应的解决措施。
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| 关 键 词： | LPCVD 多晶硅薄膜 发雾 表面缺陷 |
A Study on Formation and Elimination of Fogging in LPCVD Poly Si Films |
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| XU Shuai,XU Chao,WANG Xin-sheng,LIU Guo-zhu.A Study on Formation and Elimination of Fogging in LPCVD Poly Si Films[J].Electronics & Packaging,2012,12(2):40-43. |
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| Authors: | XU Shuai XU Chao WANG Xin-sheng LIU Guo-zhu |
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| Affiliation: | (China Electronics Technology Group Corporation No.58 Research Institute, Wuxi 214035,China) |
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| Abstract: | The fogging of LPCVD poly Si films has great effects on properties of CMOS device, in this paper, the formation mechanism and influencing factors of fogging were analyzed, the solution of adopting low temperature, low pressure and keeping gas system clean to eliminate the fogging was suggested. According to the shape and location of fogging, the surface defects were classified, and the proposal were put forward in the aspects of clean process, contamination analysis and previous process to avoid fogging. |
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| Keywords: | LPCVD Poly Si film fogging surface defect |
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