| 高分辨二次电子像中的成分衬度 |
| |
| 引用本文： | 徐军,陈文雄,张会珍. 高分辨二次电子像中的成分衬度[J]. 电子显微学报, 1997, 0(1) |
| |
| 作者姓名： | 徐军 陈文雄 张会珍 |
| |
| 作者单位： | 北京大学电子显微镜实验室 |
| |
| 摘 要： | 从理论上阐明了获得高分辨二次电子成分衬度像的原理、条件和方法，并作了细致的实验验证，空间分辨率为３．３ｎｍ（Ｖ０＝５ｋＶ），原子序数分辨率为０．０３Ｚ。实验研究样品为分子束外延ＡｌＧａＡｓ量子阱激光器，其分层结构的最小层宽为７ｎｍ，测得的层宽和透射电镜测量结果相吻合，由于透射电镜制样的复杂和困难，高分辨扫描电镜二次电子成分衬度像观测方法具有重要的理论意义和实用价值
|
| 关 键 词： | 二次电子成分衬度像 场发射扫描电镜 |
Composition Contrast in High Resolution Secondary Electron Image |
| |
| Xu Jun Chen Wenxiong Zhang Huizhen. Composition Contrast in High Resolution Secondary Electron Image[J]. Journal of Chinese Electron Microscopy Society, 1997, 0(1) |
| |
| Authors: | Xu Jun Chen Wenxiong Zhang Huizhen |
| |
| Abstract: | The principle,condition and method for obtaining high resolution composition contrast in secondary electron image have been theoretically clarified,corresponding experimental research work has been carried out.Spacial resolution is 3.3nm( V 0 =5kV),and atomic number resolution 0.03Z.Specimen taken for experiment is single quantum well laser with its minimum layer width of 7nm.The measured layer widths are consistent with that of TEM.Owing to the simplicity in making sample as compared with that of TEM,the method of high resolution composition contrast in secondary electron image possesses important theoretical and applied value. |
| |
| Keywords: | secondary electron image composition contrast Field emission SEM |
| 本文献已被 CNKI 等数据库收录！ |
