Microstructures and electrical properties of SrRuO3 thin films on LaAIO3 substrates |
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Authors: | F. Chu Q. X. Jia G. Landrum X. D. Wu M. Hawley T. E. Mitchell |
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Affiliation: | (1) Materials Science and Technology Division, Los Alamos National Laboratory, 87545 Los Alamos, NM;(2) Present address: Department of Chemistry and Materials Science Center, Cornell University, 14853-1301 Ithaca, NY |
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Abstract: | Conductive SrRuO3 thin films have been deposited using pulsed laser deposition on LaA103 substrates at different substrate temperatures. Structural and microstructural properties of the SrRuO3/LaAlO3 system have been studied using x-ray diffraction, scanning electron microscopy, and scanning tunneling microscopy. Electrical properties of SrRuO3 thin films have been measured. It was found that the film deposited at 250°C is amorphous, showing semiconductor-like temperature dependence of electrical conductivity. The film deposited at 425°C is crystalline with very fine grain size (100~200Å), showing both metallic and semiconductor-like temperature dependence of electrical conductivity in different temperature regions. The film deposited at 775°C shows a resistivity of 280 µΩ.cm at room temperature and a residual resistivity ratio of 8.4. Optimized deposition conditions to grow SrRuO3 thin films on LaA103 substrates have been found. Possible engineering applications of SrRuO3 thin films deposited at different temperatures are discussed. Bulk and surface electronic structures of SrRuO3 are calculated using a semi-empirical valence electron linear combination of atomic orbitals approach. The theoretical calculation results are employed to understand the electrical properties of SrRuO3 thin films. |
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Keywords: | Conductive SrRuO3 LaA1O3 substrates Microstructures Thin films |
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