Possibility of doping and using ZnSe,CdS, and GaP layers as down converters of Si and CuInSe2 solar cells |
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| Authors: | M. S. Saidov |
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| Affiliation: | (1) Physicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Republic of Uzbekistan, Uzbekistan |
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| Abstract: | The possibility and reasonability of developing down converters of Si and CuInSe2 solar cells based on Ge2P- and GaSb-doped GaP, ZnTe, and CdS is discussed. The case is considered when a down converter is a part of a solar cell’s p–n heterojunction, and the preparation conditions for the GaP(Ge2GaSb) layer of the Si substrate are specified. |
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