首页 | 本学科首页   官方微博 | 高级检索  
     


The growth of low dislocation density Sr1−x,Bax Nb2O6 crystals
Authors:R. B. Maciolek  T. L. Schuller  S. T. Liu
Affiliation:(1) Honeywell Corporate Research Center, 55420 Bloomington, Minnesota
Abstract:The dislocation structures of both pure and Nd doped strontium barium niobate crystals, grown by the Czochralski method, were studied using an etch pit technique. It was determined that dislocations in the boule were being propagated from the seed and were confined to the center of the crystal. Typical dislocation density was 5x104 cm−2. Through the careful control of growth parameters and use of seed material cut from the dislocation free outer portion of a crystal, it was possible to grow crystals with very low dislocation densities, 1x102 cm−2, and on occasion dislocation free crystals.
Keywords:dislocation  electro-optic  etch pit  pyroelectric  single crystal  Sr1−  xBaxNb2O6
本文献已被 SpringerLink 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号