Dislocation structure behind a shock front in fcc perfect crystals: Atomistic simulation results |
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Authors: | Timothy C. Germann Brad Lee Holian Peter S. Lomdahl Dome Tanguy Michel Mareschal Ramon Ravelo |
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Affiliation: | (1) Applied Physics Division, the Los Alamos National Laboratory, 87545 Los Alamos, NM;(2) Theoretical Division, the Los Alamos National Laboratory, 87545 Los Alamos, NM;(3) CNRS, Ecole des Mines de Saint-Etienne, Fr-42023 Saint-Etienne, France;(4) Universite Libre de Bruxelles Belgium, Belgium;(5) CECAM, ENS-Lyon, Fr-69007 Lyon, France;(6) Department of Physics, University of Texas, 79968 El Paso, TX;(7) Applied Physics Division, Los Alamos National Laboratory, 87545 Los Alamos, NM |
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Abstract: | Large-scale molecular dynamics simulations are used to investigate the dislocation structure behind a shock front in perfect fcc crystals. Shock compression in both the 〈100〉 and 〈111〉 directions induces dislocation loop formation via a sequential emission of partial dislocations, but in the 〈100〉 case, this process is arrested after the first partial, resulting in stacking-fault loops. The large mobility of the bounding partial dislocations results in a plastic wave that is always overdriven in the 〈100〉 direction; the leading edges of the partials are traveling with the plastic front, as in the models of Smith and Hornbogen. In contrast, both partials are emitted in 〈111〉 shock compression, resulting in perfect dislocation loops bounded only by thin stacking fault ribbons due to the split partial dislocations. These loops grow more slowly than the plastic shock velocity, so new loops are periodically nucleated at the plastic front, as suggested by Meyers. This article is based on a presentation given in the symposium “Dynamic Deformation: Constitutive Modeling, Grain Size, and Other Effects: In Honor of Prof. Ronald W. Armstrong,” March 2–6, 2003, at the 2003 TMS/ASM Annual Meeting, San Diego, California, under the auspices of the TMS/ASM Joint Mechanical Behavior of Materials Committee. |
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