| MOS结构电容高频C-V特性的应用 |
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| 引用本文： | 熊海,孔学东,章晓文. MOS结构电容高频C-V特性的应用[J]. 半导体技术, 2010, 35(1): 94-98. DOI: 10.3969/j.issn.1003-353x.2010.01.022 |
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| 作者姓名： | 熊海 孔学东 章晓文 |
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| 作者单位： | 广东工业大学,材料学院,广州,510006;工业和信息化部电子第五研究所,广州,510610;工业和信息化部电子第五研究所,广州,510610 |
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| 摘 要： | CMOS工艺的发展要求栅介质层厚度不断减薄,随着栅极漏电流的不断增大使用准静态的方法测量器件特性不稳定。根据这一情况,提出用高频电容电压(C-V)来评价深亚微米和超深亚微米器件工艺。通过高频C-V法结合MOS相关理论可以得到介质层的厚度、最大耗尽层宽度、阈值电压、平带电压等参数以及栅介质层中各种电荷密度的分布,用以评价栅介质层和衬底的界面特性。文章提出通过电导对测量结果进行修正,使其能够适用更小尺寸器件的要求,使高频C-V法能够在不同的工艺下得到广泛的应用。
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| 关 键 词： | MOS电容 电荷密度 界面态 高频C-V |
Application of High Frequency Capacitance-Voltage Characterization of MOS Struture |
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| Xiong Hai,Kong Xuedong,Zhang Xiaowen. Application of High Frequency Capacitance-Voltage Characterization of MOS Struture[J]. Semiconductor Technology, 2010, 35(1): 94-98. DOI: 10.3969/j.issn.1003-353x.2010.01.022 |
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| Authors: | Xiong Hai Kong Xuedong Zhang Xiaowen |
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| Affiliation: | 1.Material Department of Guangdong University of Technology;Guangdong 510006;China 2.The 5th ElectronicResearch Institute of China Ministry of Information Industry;Guangzhou 510610;China |
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| Abstract: | The thickness of gate oxide have been scaled down aggressively with the development of the CMOS technologies.However,the leakage current has increased drastically which made the measurement of quasi-static is instability.The processes of deep-submicron and ultra-deep-submicron devices were controlled and evaluated by high frequency capacitor-voltage(C-V) method.By this way,according the MOS theory we can extract the parameters of the MOS devices including the thickness of the dielectric,the maximal width of... |
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| Keywords: | MOS capacitor the density of charge interface state high freqency C-V |
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