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Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions |
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| Authors: | Surnina M. A. Akchurin R. Kh. Marmalyuk A. A. Bagaev T. A. Sizov A. L. |
| Affiliation: | 1.Lomonosov State University of Fine Chemical Technology, Moscow, 119571, Russia ;2.National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow, 115409, Russia ;3.Sigm Plus Company, Moscow, 117342, Russia ;4.Orion Research and Production Corporation, Moscow, 111538, Russia ; |
| Abstract: | Technical Physics Letters - Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH3) as precursors are... |
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