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A study of the effect of electron and proton irradiation on 4H-SiC device structures |
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| Authors: | Lebedev A A Davydovskaya K S Yakimenko A N Strel’chuk A M Kozlovskii V V |
| Affiliation: | 1.Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia ;2.Peter the Great St. Petersburg Polytechnic University, St. Petersburg, 195251, Russia ; |
| Abstract: | The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (N d –N a ) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm–1 under electron irradiation and 50–70 cm–1 under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm–2. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages. |
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