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Creation and electrical properties of p-Cu2ZnSnS4/n-Si heterojunctions |
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| Authors: | Yusupov A Adambaev K Turaev Z Z Aliev S R Kutlimratov A |
| Affiliation: | 1.Tashkent Automobile and Road Institute, Tashkent, 100060, Uzbekistan ;2.Ulugbek National University of Uzbekistan, Tashkent, 100174, Uzbekistan ;3.Andizhan State University, Andizhan, 710000, Uzbekistan ;4.Physicotechnical Institute, Academy of Sciences of Uzbekistan, Tashkent, 100084, Uzbekistan ; |
| Abstract: | Technical Physics Letters - Anisotype p-Cu2ZnSnS4/n-Si heterojunctions have been manufactured for the first type by sulfidation of base-metal layers predeposited onto polycrystalline silicon... |
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