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Normally off transistors based on in situ passivated AlN/GaN heterostructures |
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| Authors: | Zhuravlev K. S. Malin T. V. Mansurov V. G. Zemlyakov V. E. Egorkin V. I. Parnes Ya. M. |
| Affiliation: | 1.Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia ;2.Novosibirsk State University, Novosibirsk, 630090, Russia ;3.National Research University of Electronic Technology (MIET), Zelenograd, Moscow oblast, 124498, Russia ;4.Svetlana-Elektronpribor Company, St. Petersburg, 194021, Russia ; |
| Abstract: | A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm, and breakdown voltage above 60 V have been fabricated, in which the drain and gate current collapse phenomena are virtually absent. |
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