Sm掺杂La_2Mo_2O_9的合成及其导电性

用固相反应法合成了La2-xSmxMo2O9(x=0~2)。室温XRD测试结果表明,在掺Sm计量x≥0.9时,出现杂质相的衍射峰;x≤0.85时,晶胞参数随Sm掺杂计量增加而线性降低。用直流四电极法和离子阻塞法在723~1 173 K温度范围测定了合成试样的电导率,结果表明电子电导率和电导率均随Sm掺杂量增大而降低,掺Sm增大了电导活化能和电子电导活化能。

Synthesis and Conductivity of La2Mo2O9 Doped by Sm

La2-xSmxMo2O9(x=0~2) were prepared by method of the solid state reaction.Room temperature XRD measurement showed that the diffraction peaks of impurities appeared when doping amount of samarium exceeded 0.9 of mass fraction.Four-probe DC technique and ion blocking method were used to measure the total electrical conductivity and the electronic conductivity within the temperature of 723~1 173 K.The electronic conductivity and the electrical conductivity decreased with increasing amount of samarium,while both the activation energy of electronic conductivity and electrical conductivity increased with doped samarium.