| 一种非均匀掺杂的全耗尽SOI-MOSFET阈值电压模型(英文) |
| |
| 引用本文： | 张国和,邵志标,周凯.一种非均匀掺杂的全耗尽SOI-MOSFET阈值电压模型(英文)[J].半导体学报,2007(6). |
| |
| 作者姓名： | 张国和 邵志标 周凯 |
| |
| 作者单位： | 西安交通大学电子科学与技术系 西安710049 |
| |
| 摘 要： | 对垂直于沟道的二维电势分布函数提出了一种新的近似,给出了基于这种近似的杂质浓度呈高斯分布的非均匀掺杂全耗尽SOI-MOSFET的阈值电压解析模型.模型结果与MEDICI数值模拟结果符合得很好,表明了模型的准确性,这为实践中分析与控制非均匀掺杂的全耗尽SOI-MOSFET的阈值电压提供了一种新的途径.
|
| 关 键 词： | 全耗尽SOI-MOSFET 非均匀掺杂 表面势 阈值电压 |
Threshold Voltage Model for a Fully Depleted SOI-MOSFET with a Non-Uniform Profile |
| |
| Abstract: | A novel approximation of the two-dimensional(2D)potential function perpendicular to the channel is proposed,and then an analytical threshold voltage model for a fully depleted SOI-MOSFET with a non-uniform Gaussian distribution doping profile is given based on this approximation.The model agrees well with numerical simulation by MEDICI.The result represents a new way and some reference points in analyzing and controlling the threshold voltage of non-uniform fully depleted(FD)SOI devices in practice. |
| |
| Keywords: | fully depleted SOI-MOSFET non-uniform surface potential threshold voltage |
| 本文献已被 CNKI 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
