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Fabrication and characterization of an A1GaN/PZT detector
Authors:Zhang Yan  Sun Jinglan  Wang Nilil  Han Li  Liu Xiangyang  Li Xiangyang  Meng Xiangjian
Affiliation:[1]State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences Shanghai 200083, China [2]National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Abstract:
Keywords:A1GaN/PZT  dual-band detector  UV/IR  responsivity  detectivity
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