深亚微米集成电路用硅单晶材料

由于经济和技术的发展,深亚微米集成电路要求硅单晶材料向大直径和无（少）缺陷方向发展。综述了深亚微米集成电路用硅单晶材料的研究和发展,指出对于已开始应用的300毫米硅单晶而言,磁场拉晶、计算机模拟、线切割、双面抛光等工艺成为大直径硅单晶研制的重要特征;利用晶体生长速率和固液界面的温度梯度的设计,硅单晶中的自间隙硅原子、空位以及相关的微缺陷可以被控制;通过快速热处理,引入和控制空位,进而控制氧沉淀的新型内吸杂技术,可以制备高质量的表面清洁区;利用氮杂质掺杂,可以抑制硅单晶中VOID缺陷和增加硅片的机械强度。最后,还讨论了硅单晶材料的今后的研究方向和趋势。

Silicon used for sub-micro LSI

Silicon material used in making sub-micro larger scale integrated circuits (LSI) is becoming everlarger in diameter and on both technical and economic grounds.This paper reviews progress in research and development (R & D) on silicon used in sub-micro LSI.It is pointed out that for silicon wafers with a diameter of 300mm,crystal growth under magnetic filed,computer simulation,wire cutting and polishing on double sides are the most important techniques.By adjusting the growth rate of crystal and the temperature gradient in the interface of solid and liquid,annealing by the rapid thermal process,nitrogen doping and so on,which are called "defect engineering ",mi-crodefects related to the interstitial silicon atom and vacancy will be controlled and the quality of silicon will be im proved.Future R & D trends are also discussed.