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Planarization of C-face 4H-SiC substrate using Fe particles and hydrogen peroxide solution |
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| Authors: | Akihisa Kubota Masahiko YoshimuraSakae Fukuyama Chihiro IwamotoMutsumi Touge |
| Affiliation: | Department of Mechanical System Engineering, Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Kumamoto City, Kumamoto 860-8555, Japan |
| Abstract: | |
| Keywords: | Silicon carbide (SiC) Polishing Planarization Atomically flat Damage-free |
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