首页 | 本学科首页   官方微博 | 高级检索  
     

电荷耦合器件信号电荷转移的数值模拟
引用本文:王祖军,刘以农,陈伟,唐本奇,肖志刚,黄绍艳,刘敏波,张勇.电荷耦合器件信号电荷转移的数值模拟[J].半导体学报,2009,30(12):124007-8.
作者姓名:王祖军  刘以农  陈伟  唐本奇  肖志刚  黄绍艳  刘敏波  张勇
摘    要:建立了线阵埋沟CCD的器件物理模型和数值模拟方法;运用半导体器件模拟软件MEDICI,数值模拟了CCD信号电荷在三相时序脉冲驱动下动态转移过程;模拟计算了CCD电荷转移效率随信号电荷包大小的变化以及暗电子数随埋沟掺杂浓度大小的变化情况。数值模拟结果与理论分析、实验测试结果吻合较好。

关 键 词:CCD,电荷转移效率,暗信号,数值模拟,MEDICI
修稿时间:8/4/2009 1:01:24 PM

Simulation for signal charge transfer of charge coupled devices
Wang Zujun,Liu Yinong,Chen Wei,Tang Benqi,Xiao Zhigang,Huang Shaoyan,Liu Minbo and Zhang Yong.Simulation for signal charge transfer of charge coupled devices[J].Chinese Journal of Semiconductors,2009,30(12):124007-8.
Authors:Wang Zujun  Liu Yinong  Chen Wei  Tang Benqi  Xiao Zhigang  Huang Shaoyan  Liu Minbo and Zhang Yong
Affiliation:Department of Engineering Physics, Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Tsinghua University, Beijing 100084, China; Northwest Institute of Nuclear Technology, Xi'an 710024, China;Department of Engineering Physics, Key Laboratory of Particle & Radiation Imaging of Ministry of Education, Tsinghua University, Beijing 100084, China;Northwest Institute of Nuclear Technology, Xi'an 710024, China;Northwest Institute of Nuclear Technology, Xi'an 710024, China;Northwest Institute of Nuclear Technology, Xi'an 710024, China;Northwest Institute of Nuclear Technology, Xi'an 710024, China;Northwest Institute of Nuclear Technology, Xi'an 710024, China;Northwest Institute of Nuclear Technology, Xi'an 710024, China
Abstract:Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices (CCDs). The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency (CTE) and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.
Keywords:CCD  CTE  dark signal  numerical simulation  MEDICI
点击此处可从《半导体学报》浏览原始摘要信息
点击此处可从《半导体学报》下载全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号