MOS capacitors on epitaxial Ge-Si/sub 1-x/Ge/sub x/ with high-/spl kappa/ dielectrics using RPCVD |
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| Authors: | Chen X Joshi S Chen J Ngai T Banerjee SK |
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| Affiliation: | Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA; |
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| Abstract: | We report the successful growth of MOS capacitor stacks with low temperature strained epitaxial Ge or Si/sub 1-x/Ge/sub x/(x=0.9) layer directly on Si substrates, and with HfO/sub 2/(EOT=9.7 /spl Aring/) as high-/spl kappa/ dielectrics, both using a novel remote plasma-assisted chemical vapor deposition technique. These novel MOS capacitors, which were fabricated entirely at or below 400/spl deg/C, exhibit normal capacitance-voltage and current-voltage characteristics. |
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