| 注砷硅片低能电子束退火 |
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| 引用本文： | 承焕生 孙迭虎. 注砷硅片低能电子束退火[J]. 核技术, 1990, 13(1): 9-13 |
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| 作者姓名： | 承焕生 孙迭虎 |
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| 作者单位： | 复旦大学 |
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| 摘 要： | 本文报道了用低能大面积电子束处理注砷硅片的实验结果。由四探针和背散射、沟道效应测量结果表明，用本方法退火的样品具有电激活率高和砷原子再分布小的优点。
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| 关 键 词： | 电子束退火 沟道效应 注砷硅片 半导体材料 |
Transient annealing of As-implanted silicon by a large area low energy electron beam |
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| Cheng Huansheng Sun Diechi. Transient annealing of As-implanted silicon by a large area low energy electron beam[J]. Nuclear Techniques, 1990, 13(1): 9-13 |
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| Authors: | Cheng Huansheng Sun Diechi |
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| Affiliation: | Fudan University |
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| Abstract: | As-implanted silicon wafers are irradiated transiently using a large area low energy electron beam. The results on sheet resistivity and RBS/channeling experiment indicate that the electrical activation of the dopants is almost 100% complete. In contrast with the conventional furnace annealing, better recovery of the implantation damage is obtained and the dopant redistribution is weakened. |
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| Keywords: | Ion implantation Electron beam annealing Channeling effect |
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