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| 一种基于栅交叉耦合连接的电荷泵设计 | |
| 引用本文： | 李鹏,徐东明,张翔祯. 一种基于栅交叉耦合连接的电荷泵设计[J]. 中国集成电路, 2012, 0(8): 36-40,48 |
| 作者姓名： | 李鹏 徐东明 张翔祯 |
| 作者单位： | 1. 西安邮电学院电子工程学院,陕西西安,710061 2. 西安邮电学院通信与信息工程学院,陕西西安,710061 3. 西安深亚电子有限公司,陕西西安,710061 |
| 摘 要： | 对于普通CMOS工艺中容易产生的衬底偏置效应,基于dickson电荷泵原理,本文采用了一种栅交叉耦合的方式来选择相应PMOS管的衬底电压,从而消除了衬底偏置效应的影响。再结合相应的电路,诸如时钟控制电路和整流电路等,为EEPROM提供稳定擦写电流。该设计能有效消除衬底偏置效应影响,更好的提高电荷泵工作效率。 |
| 关 键 词： | CMOS工艺 衬底偏置 dickson电荷泵 栅交叉耦合 |
A Design of Charge Pump By Using PMOS Gate Cross-coupling Connection |
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| LI Peng,XU Dong-,.Xi＇an University of Posts and Xi＇ an University,. Xi＇an Supe g,ZHANG Xiang-zhen. A Design of Charge Pump By Using PMOS Gate Cross-coupling Connection[J]. China Integrated Circuit, 2012, 0(8): 36-40,48 | |
| Authors: | LI Peng XU Dong- .Xi＇an University of Posts Xi＇ an University . Xi＇an Supe g ZHANG Xiang-zhen |
| Affiliation: | 3 Telecommunications Xi ＇an 710061,China; of Posts and Telecommunications Xi＇an 710061,China; rmicro Electronics Co.,LTD Xi＇an 710060,China) |
| Abstract: | For the substrate bias effect which is prone in ordinary CMOS technology, based on the dickson charge pump principle, the design utilized the gate cross-coupling connection to choose the corresponding PMOS substrate voltage, thus eliminating the effect of substrate bias. Then combined with the corresponding circuit, such as clock control circuit and the rectifier circuit, it can provide a stable erase voltage for EEPROM. The design can eliminate the effect of substrate bias and improve the efficiency of charge pump effectively. |
| Keywords: | CMOS technology substrate bias dickson charge pump gate cross-coupling |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |