| 负电子亲和势Ⅲ－Ⅴ族化合物半导体光电阴极及其发展 |
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| 引用本文： | 马建一,顾肇业,申屠浩. 负电子亲和势Ⅲ－Ⅴ族化合物半导体光电阴极及其发展[J]. 微纳电子技术, 1996, 0(6) |
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| 作者姓名： | 马建一 顾肇业 申屠浩 |
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| 作者单位： | 电子部第５５研究所 |
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| 摘 要： | 阐明了负电子亲和势Ⅲ－Ⅴ族化合物半导体光电阴极的卓越光电性能，论述了关于其物理机制的四种理论模型见解，介绍了阴极材料生长技术和制作工艺以及拓展的应用领域并展望了趋势和前景。
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| 关 键 词： | 负电子亲和势，光电阴极，场助光电阴极，量子效率，阈值波长 |
Development of Negative Electron Affinity Ⅲ-ⅤCompound Semiconductor Photocathodes |
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| Ma Jianyi, Gu Zhaoye, Shen Tuhao. Development of Negative Electron Affinity Ⅲ-ⅤCompound Semiconductor Photocathodes[J]. Micronanoelectronic Technology, 1996, 0(6) |
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| Authors: | Ma Jianyi Gu Zhaoye Shen Tuhao |
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| Abstract: | The negative electron affinity Ⅲ-Ⅴ compound photocathodes with greatly advanced photoelectricity performance are described.Four sorts of theory model about physical mechanism are reviewed.The cathode material growing technique and manufacturing protess, as well as its applications are introduced,The developing trends and future prospects are also addressed. |
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| Keywords: | s: Nagative electron affinity Photo-cathode Field-assisted photo-cathode Quantum efficiency Threshold wavelength |
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